I am an electrical engineer and graduate Ph.D. student in the EECS department at UC Berkeley. My research interest is broadly in the development and integration of electronic, photonic, and acoustic devices for applications in communication, sensing, and quantum computing. I am particularly interested in engineering silicon-based systems that leverage and supports superconducting quantum hardware towards scalable architecture and practical computing potential.


Research highlights:

Phonon-Protected Superconducting Qubit: In this project, we engineer superconducting circuits fabricated on acoustic bandgap devices to protect two-level systems (TLS’s) from phonon emission, study engineered TLS properties, and use these results to design superconducting qubits protected from phonon and TLS dissipation.

Non-hermitian and disordered photonics : We have investigated dissipative electromagnetic systems based on the theory of non-hermitian hamiltonians with potential usage in nanophotonics and laser technologies. We also studied the application of statistical and thermodynamical principles in modeling complex disordered and non-linear photonic systems. -Ref [1][2]

Silicon electronic/photonic integration: The project was sponsored by Global Foundry (GF) to develop an integrated electronic/photonic platform for optical communication and signal processing. This include the design and fabrication of subwavelength polarizers and lensed fibers for efficient coupling. -Ref [1][2]

Integrated optofluidic devices: We have designed and investigated various silicon and polymer-based integrated optofluidic sensors. Subwavelength grating slot waveguide (SWGS) on SOI was proposed and shown to have large mode sensitivity to cladding perturbations. Gradient heating of polydimethylsiloxane (PDMS) was shown to form gradient multimode waveguide with a concentric microfluidic channel; a novel process for optofluidic waveguides. – Ref [1][2]

Passive RFID transceiver: We performed full circuit and layout design of Passive RFID Transceiver with asymmetric communication links using 28nm process node. Digital Impulse Radio Ultra-wideband (IR-UWB) transmitter was used for the uplink and ISM band for the downlink, strategically selected to reduce the power consumption for IoT applications. -Ref [1].